Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
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DOI：
10.1109/tmtt.2018.2878725
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发表时间：
2018-11
影响因子：
4.3
通讯作者：
M. Ćwikliński;C. Friesicke;P. Brückner;D. Schwantuschke;S. Wagner;R. Lozar;H. Massler;R. Quay;O. Ambacher
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文献类型：
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作者：
M. Ćwikliński;C. Friesicke;P. Brückner;D. Schwantuschke;S. Wagner;R. Lozar;H. Massler;R. Quay;O. Ambacher
本文介绍了首次报道的基于氮化镓工艺的全W波段(75-110 GHz)功率放大器(PA)单片微波集成电路(MMIC)的设计。讨论的MMIC有两个版本。在70-110 GHz带宽(BW)范围内，三级功率放大器平均可产生25.6 dBm功率，功率附加效率(PAE)为6.5%，而四级功率放大器可产生27 dBm功率，功率附加效率(PAE)为6.1%。在80 GHz处获得了28.6dBm的峰值输出功率，平均功率效率为8.6%，对应的功率密度为2.6W/mm。重要的带宽部分是通过在设计中加入一种新型的宽带径向存根来实现的，这可以提供比传统版本近两倍的抑制带宽改进。据我们所知，没有其他固态电路可以在整个W频段提供如此高的功率水平。
In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.