Influence of charged defects on the dielectric response of incipient ferroelectrics
Influence of charged defects on the dielectric response of incipient ferroelectrics
复制标题
带电缺陷对初期铁电体介电响应的影响
DOI：
10.1063/1.372031
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
L. T. Ter
中科院分区：
文献类型：
--
作者：
O. Vendik;L. T. Ter
初始铁电体的块状晶体块和薄膜样品之间的带电晶界被认为是产生内置电场的带电缺陷，该电场被视为偏置场的统计色散。偏置场的归一化统计色散（表示为 ΨS）用作初期铁电体介电响应唯象模型的参数之一。基于对 SrTiO3 晶体块之间边界的空间分辨电子能量损失谱的多重散射分析，定量估计晶界上的表面电荷密度。初始铁电体中的内建电场通过参数 ΣS 进行定量估计，该参数决定了初始铁电单晶和薄膜样品介电响应的一些特定特征。
Charged grain boundaries between crystalline blocks in bulk and thin film samples of incipient ferroelectrics are considered as charged defects producing a built-in electric field which is treated as a statistical dispersion of the biasing field. The normalized statistic dispersion of a biasing field, denoted as ξS, is used as one of the parameters of a phenomenological model of the dielectric response of incipient ferroelectrics. The surface charge density on the grain boundary is quantitatively estimated on the basis of a multiple-scattering analysis of spatially resolved electron-energy-loss spectra of the boundary between crystalline blocks in SrTiO3. The built-in electric field in the incipient ferroelectrics is quantitatively estimated by the parameter ξS which determines some specific features of the dielectric response of the incipient ferroelectric single crystal and thin film samples.