Seeded Infiltration and Growth of Bulk YBCO Nano-Composites
Seeded Infiltration and Growth of Bulk YBCO Nano-Composites
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DOI：
10.1109/tasc.2010.2101574
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发表时间：
2011-06-01
影响因子：
1.8
通讯作者：
Cardwell, David A.
中科院分区：
文献类型：
--
作者：
Babu, N. Hari;Shi, Yun-Hua;Cardwell, David A.
籽晶渗透和生长（SIG）技术提供了块体超导体的近净形加工，与通过顶部籽晶熔体生长（TSMG）制造的样品相比，其在减小的Y2 BaCuO 5（Y-211）夹杂物尺寸、减小的收缩率、减小的孔隙率和改善的电流密度方面具有显著改善。Y2 Ba 4CuMOy相，其中M = Nb、Mo、W、Ta等，已经显示出在YBa 2Cu 3 Oy（Y-123）相基质中形成纳米级夹杂物，并有助于增强这些材料中的磁通钉扎。在本文中，我们描述了Y2 Ba 4CuWOy纳米级夹杂物引入到块体超导体的种子渗透生长过程中处理。在77 K自场下，含Y_2Ba_4CuWO_y的样品的临界电流密度J（c）超过10（5）A/cm（2）。
The seeded infiltration and growth (SIG) technique offers near-net shape processing of bulk superconductors with significant improvement in reduced Y2BaCuO5 (Y-211) inclusion size, reduced shrinkage, reduced porosity and improved current density compared to samples fabricated by top seeded melt growth (TSMG). Y2Ba4CuMOy phases where M = Nb, Mo, W, Ta, etc., have been shown to form nano-scale inclusions in the YBa2Cu3Oy (Y-123) phase matrix and to contribute to enhanced magnetic flux pinning in these materials. In this paper, we describe the introduction of Y2Ba4CuWOy nano-scale inclusions into bulk superconductors processed by the seeded infiltration growth process. Critical current density, J(c), in excess of 10(5) A/cm(2) at 77 K in self-field is observed for samples containing Y2Ba4CuWOy.