Fabrication of Sulfur Defect Rich ZnIn2S4/SnSe2 Photocatalyst with Ohmic Junction for Efficient Water to Hydrogen Energy Conversion

Fabrication of Sulfur Defect Rich ZnIn2S4/SnSe2 Photocatalyst with Ohmic Junction for Efficient Water to Hydrogen Energy Conversion
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具有欧姆结的富硫缺陷 ZnIn2S4/SnSe2 光催化剂的制备,用于高效水到氢能的转化

DOI:
10.1002/solr.202200881
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发表时间:
2022
期刊:
Social Science Research Network
影响因子:
--
通讯作者:
Zhenjiang Li
Zhenjiang Li
中科院分区:
--
文献类型:
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作者:
Xianghu Wang;Xuehua Wang;Tianyu Shi;A. Meng;Lei Wang;Sha Li;Guicun Li;Xiao Yu;Zhenjiang Li

文献摘要

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开发无贵金属助催化剂对提高光催化析氢性能具有重要意义。本文采用简单的水热法将SnSe2作为助催化剂在富硫缺陷ZnIn2S4 (Vs - ZIS)表面原位附着。由于v‐ZIS与SnSe2之间的密切的原子级界面和不同的功函数,在v‐ZIS/SnSe2中形成了具有内部电场的特殊欧姆结,这有利于v‐ZIS中的电子快速转移到SnSe2中并参与析氢反应。此外,丰富的S空位也有利于v‐ZIS/SnSe2中光载流子的分离。优化后的Vs - ZIS/SnSe2光催化剂在可见光(λ > 420 nm)下的H2析出率为29.34 mmol h−1 g−1,在420 nm下的表观量子效率为12.25%。在此基础上,提出了开发有效的助催化剂,并通过界面调制加速光载流子转移的建设性模型。
The development of a noble‐metal‐free cocatalyst is of great significance for boosting photocatalytic H2 evolution performance. Herein, SnSe2 is developed as a cocatalyst to in situ attachment on the surface of sulfur defect rich ZnIn2S4 (Vs‐ZIS) via a simple hydrothermal method. Owing to the intimate atomic‐level interface and the different work function between Vs‐ZIS and SnSe2, a particular Ohmic junction with internal electric field is formed in Vs‐ZIS/SnSe2, which facilitates the electrons in Vs‐ZIS transfer to SnSe2 and participate in H2 evolution reaction rapidly. Moreover, the abundant S vacancies also benefit the separation of photocarriers in Vs‐ZIS/SnSe2. The optimized Vs‐ZIS/SnSe2 photocatalyst performs a high H2 evolution rate of 29.34 mmol h−1 g−1 under visible light (λ > 420 nm) and an apparent quantum efficiency of 12.25% at 420 nm. Herein, constructive model on developing effective cocatalyst is afforded, and expediting photocarriers transfer through interfacial modulating.