Electronic effect on crystallization growth velocities produced by charged dangling bonds in a‐Si
Electronic effect on crystallization growth velocities produced by charged dangling bonds in a‐Si
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电子对非晶硅中带电悬空键产生的结晶生长速度的影响
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
M. Paesler
中科院分区：
文献类型：
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作者：
L. Mosley;M. Paesler
在硅中离子注入电活性掺杂剂降低了在结晶生长速度研究中测量的活化能。有证据表明，这种变化是由于电子效应引起的，电子效应是由悬挂键的充电引起的，悬挂键的充电在非晶-晶体界面的两侧产生费米能级的位移。体非晶和结晶Si中费米能级的位移的差异被确定为等于激活能的变化。我们发现带负电荷和带正电荷的悬挂键状态被分开约0.35 eV，并大致以midgap为中心。
Ion implantation of electrically active dopants in silicon lowers the activation energy measured in crystallization growth velocity studies. Evidence indicates that this change is due to an electronic effect, arising from the charging of dangling bonds which produces a shift in the Fermi level on both sides of the amorphous‐crystalline interface. The difference in the shifts of the Fermi levels in the bulk amorphous and crystalline Si is identified as being equal to the change in activation energy. We find the negatively and positively charged dangling bond states to be separated by approximately 0.35 eV, and roughly centered about midgap.