Superhydrophobic dual micro- and nanostructures fabricated by direct laser interference lithography
Superhydrophobic dual micro- and nanostructures fabricated by direct laser interference lithography
复制标题
直接激光干涉光刻制备超疏水双微纳米结构
DOI：
10.1117/1.oe.53.3.034109
复制
发表时间：
2014-03-01
影响因子：
1.3
通讯作者：
Maple, Carsten
中科院分区：
文献类型：
--
作者：
Li, Wenjun;Wang, Zuobin;Maple, Carsten
抽象。提出了一种利用直接激光干涉光刻（LIL）技术在硅衬底上制备高度有序超疏水双微纳结构的方法。该方法的创新之处在于，通过控制四光束激光干涉的过程和使用氢氟酸（HF）来去除过程中产生的二氧化硅，可以直接制造超疏水性的双重微米和纳米结构。不同的激光能量密度，曝光时间，和清洗时间进行了研究，以获得最佳值的接触角（CA）。与CA为153.2度的超疏水表面曝光60 s后，在HF浓度为5%的浸泡3 min。与其他方法相比，它是一种简单，高效的方法，其显着的特点，为高度有序的超疏水性双微和纳米结构的硅上的宏观制造。
Abstract. A method for the fabrication of highly ordered superhydrophobic dual micro- and nanostructures on silicon by direct laser interference lithography (LIL) is presented. The method offers its innovation that the superhydrophobic dual micro- and nanostructures can be fabricated directly by controlling the process of four-beam laser interference and the use of hydrofluoric acid (HF) to wipe off the silica generated during the process. Different laser fluences, exposure durations, and cleanout times have been investigated to obtain the optimum value of the contact angle (CA). The superhydrophobic surface with the CA of 153.2 deg was achieved after exposure of 60 s and immersion in HF with a concentration of 5% for 3 min. Compared with other approaches, it is a facile and efficient method with its significant feature for the macroscale fabrication of highly ordered superhydrophobic dual micro- and nanostructures on silicon.