Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
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DOI：
10.1063/1.1794353
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发表时间：
2004-09
影响因子：
4
通讯作者：
K. Sawano;S. Koh;Y. Shiraki;Y. Ozawa;T. Hattori;J. Yamanaka;Kumiko Suzuki;K. Arimoto;K. Nakagawa;N. Usami
中科院分区：
文献类型：
--
作者：
K. Sawano;S. Koh;Y. Shiraki;Y. Ozawa;T. Hattori;J. Yamanaka;Kumiko Suzuki;K. Arimoto;K. Nakagawa;N. Usami
在外延生长之前，我们通过在硅衬底上注入Ar离子制备了高质量的应变弛豫SiGe薄膜。100 nm厚的Si0.8Ge0.2薄膜的驰豫率大于80%，表面非常光滑，均方根粗糙度为0.34 nm。横截面电子显微镜分析证实，由于离子注入引起的缺陷，有效地产生了应变释放位错，并限制在异质界面附近，从而得到了无位错的SiGe表面。此外，这种离子注入方法大大降低了面内应变场的起伏。
We fabricated high-quality strain-relaxed thin SiGe layers by Ar ion implantation into Si substrates before epitaxial growth. The surface of 100-nm-thick Si0.8Ge0.2 layers, the relaxation ratio of which was more than 80%, was found to be very smooth, with a rms roughness of 0.34 nm. Cross-sectional transmission electron microscopy analysis confirmed that strain-relieving dislocations were effectively generated due to the ion-implantation-induced defects and confined in the vicinity of the heterointerface, resulting in a dislocation-free SiGe surface. Moreover, in-plane strain-field fluctuation was found to be largely reduced by this ion implantation method.