High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform
High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform
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DOI：
10.1364/prj.455969
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发表时间：
2022-06-01
影响因子：
7.6
通讯作者：
Beling, Andreas
中科院分区：
文献类型：
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作者：
Guo, Xiangwen;Shao, Linbo;Beling, Andreas
绝缘体上铌酸锂 (LNOI) 已成为通信、微波光子学和计算应用的集成光子学的一个有趣平台。尽管最近在 LNOI 平台上实现了包括调制器、谐振器和激光器在内的高性能集成器件，但高速光电探测器（光子集成电路的重要组成部分）尚未在 LNOI 上得到演示。在这里，我们首次展示了 LNOI 上的异构集成改进单行载流子光电二极管，其带宽达到创纪录的 80 GHz，在 1550 nm 波长下的响应率为 0.6 A/W。该光电二极管基于 n-down InGaAs/InP 外延层结构，该结构针对高载流子传输时间限制带宽进行了优化。光电二极管集成是使用与 LNOI 平台完全兼容的可扩展晶圆芯片键合方法实现的。 (C)2022中国激光出版社
Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform. (C) 2022 Chinese Laser Press