The relationship between electron and ion induced secondary electron imaging: a review with new experimental observations
The relationship between electron and ion induced secondary electron imaging: a review with new experimental observations
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电子和离子诱导二次电子成像之间的关系：新实验观察的回顾
DOI：
10.1002/sia.740080302
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发表时间：
1986
影响因子：
1.7
通讯作者：
D. Briggs
中科院分区：
文献类型：
--
作者：
S. Lai;A. Brown;J. Vickerman;D. Briggs
回顾了 keV 能量范围内离子轰击引起的二次电子发射的现象学和理论方面，并将该过程与电子轰击引起的二次电子发射进行了比较。二次电子发射过程的机制解释了用扫描微聚焦Ga+束和电子束研究的测试样品的二次电子图像对比度之间的异同。从离子诱导的二次电子图像中，可以以高表面灵敏度获得有关样品的形貌、材料和晶体学性质的信息。样本不同区域的表面电位差异也被证明会导致电压对比效应。
The phenomenalogical and theoretical aspects of secondary electron emission due to ion bombardment in the keV energy range has been reviewed and a comparision of this process with secondary electron emission due to electron bombardment has been made. The similarities and differences between the contrasts in the secondary electron images of test specimens studied with both scanning microfocused Ga+ beams and electron beams have been explained by the mechanisms of the secondary electron emission processes. From ion induced secondary electron images information on the topography, material and crystallographic nature of specimens can be obtained with high surface sensitivity. Differences in surface potential on different areas of a specimen has also been shown to result in voltage contrast effects.