Bending experiment on pentacene field-effect transistors on plastic films
Bending experiment on pentacene field-effect transistors on plastic films
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DOI：
10.1063/1.1868868
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发表时间：
2005-02-14
影响因子：
4
通讯作者：
Takagi, S
中科院分区：
文献类型：
--
作者：
Sekitani, T;Kato, Y;Takagi, S
我们已经制造了非常灵活的并五苯场效应晶体管与聚酰亚胺栅极介质层的塑料薄膜上的迁移率为0.3 cm（2）/V s和10（5）的开/关比，并测量了它们的电性能在各种压缩和拉伸应变，同时改变弯曲半径的基础塑料薄膜系统。我们已经发现，当弯曲半径大于4.6 mm时，源漏电流随弯曲半径的变化是可再现的和可逆的，这对应于类似于1.4 +/-0.1%的应变。此外，源极-漏极电流的变化不依赖于应变方向与电流方向。(C)2005年美国物理学会。
We have fabricated very flexible pentacene field-effect transistors with polyimide gate dielectric layers on plastic films with a mobility of 0.3 cm(2)/V s and an on/off ratio of 10(5), and have measured their electrical properties under various compressive and tensile strains while changing the bending radius of the base plastic films systematically. We have found that the change in source-drain current with bending radius is reproducible and reversible when the bending radius is above 4.6 mm, which corresponds to strains of similar to1.4 +/- 0.1%. Furthermore, the change in source-drain current does not depend on the direction of strain versus direction of current flow. (C) 2005 American Institute of Physics.