Chemical State Information of Bulk Specimens Obtained by SEM-Based Soft-X-Ray Emission Spectrometry
Chemical State Information of Bulk Specimens Obtained by SEM-Based Soft-X-Ray Emission Spectrometry
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DOI：
10.1017/s1431927614000439
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发表时间：
2014-06-01
影响因子：
2.8
通讯作者：
Kuramoto, Satoshi
中科院分区：
文献类型：
--
作者：
Terauchi, Masami;Koshiya, Shogo;Kuramoto, Satoshi
电子束诱导的软X射线发射光谱（SXES），使用光栅光谱仪已被引入到传统的扫描电子显微镜（SEM），用于表征所需的样品区域的散装材料。该谱仪是采用像差校正光栅和多通道板探测器与电荷耦合器件相机相结合的掠入射平场光学系统，已应用于透射电子显微镜。最好的分辨率被确认为0.13 eV在镁L-发射（50 eV），这是最近专用的电子能量损失光谱仪器相媲美。该SXES-SEM仪器呈现块状Mg和Li的简单金属的状态密度。在Si片的Si L发射、GaP片的P L发射以及AlCo、AlPd、Al_2Pt和Al_2Au金属间化合物的Al L发射中观察到了明显的能带结构效应。
Electron-beam-induced soft-X-ray emission spectroscopy (SXES) that uses a grating spectrometer has been introduced to a conventional scanning electron microscope (SEM) for characterizing desired specimen areas of bulk materials. The spectrometer was designed as a grazing incidence flat-field optics by using aberration corrected (varied line spacing) gratings and a multichannel plate detector combined with a charge-coupled device camera, which has already been applied to a transmission electron microscope. The best resolution was confirmed as 0.13 eV at Mg L-emission (50 eV), which is comparable with that of recent dedicated electron energy-loss spectroscopy instruments. This SXES-SEM instrument presents density of states of simple metals of bulk Mg and Li. Apparent band-structure effects have been observed in Si L-emission of Si wafer, P L-emission of GaP wafer, and Al L-emissions of intermetallic compounds of AlCo, AlPd, Al2Pt, and Al2Au.