Hole Transport in p-Type ZnO
Hole Transport in p-Type ZnO
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DOI：
10.1143/jjap.45.6346
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发表时间：
2006-05
影响因子：
1.5
通讯作者：
T. Makino;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
中科院分区：
文献类型：
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作者：
T. Makino;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
采用包含A价带和B价带的双能带模型，分析了p型氧化锌晶体的霍尔效应随温度的变化。利用“弛豫时间近似”计算了空穴输运特性(迁移率和有效霍尔因子)随温度的变化。结果表明，声形变势引起的晶格散射占主导地位。在计算电离杂质机制的散射率时，在施主和受主浓度不同的补偿比下，采用100 meV或170 meV的激活能。在受主浓度为7×10~(18)cm~3时，理论霍尔迁移率约为70 cm~2·V~(-1)·S~(-1)，激活能为100 meV，300K时的补偿比为0.8。
A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the “relaxation time approximation” as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7×1018 cm3 is about 70 cm2 V-1 s-1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.