SiC/Si-dots multilayer structures formed by supersonic free jets of CH3SiH3 and Si3H8
SiC/Si-dots multilayer structures formed by supersonic free jets of CH3SiH3 and Si3H8
复制标题
CH3SiH3 和 Si3H8 超音速自由射流形成的 SiC/Si 点多层结构
DOI：
10.1116/1.1617280
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发表时间：
2003
影响因子：
1.4
通讯作者：
T. Motooka
中科院分区：
文献类型：
--
作者：
Y. Ikoma;R. Ohtani;Nobuaki Matsui;T. Motooka
研究了利用超音速自由喷射化学气相沉积技术在Si（100）衬底上制备SiC/Si点多层结构。CH 3SiH 3和Si 3 H8射流分别用于SiC和Si点。通过第一次CH 3SiH 3和随后的Si 3 H8喷射曝光，生长了厚度为约15 nm的第一外延SiC层和尺寸为约100 nm的多晶Si点。当CH_3SiH_3和Si_3 H_8射流被引导到Si点表面时，薄的（约5 nm）SiC层和约50 nm的Si点生长并形成Si点/SiC/Si点/SiC/Si（100）。通过重复这些SiC和Si点生长，在Si（100）上形成多晶SiC/Si点多层。
We have investigated the formation of multilayer structures of SiC/Si-dots on Si(100) by supersonic free jet chemical vapor deposition. CH3SiH3 and Si3H8 jets were used for SiC and Si-dots, respectively. The first epitaxial SiC layer with a thickness of ∼15 nm and polycrystalline Si-dots with a size of ∼100 nm were grown by the first CH3SiH3 and following Si3H8 jet exposures. When the CH3SiH3 and Si3H8 jets were directed onto the Si-dot surface, thin (∼5 nm) SiC layers and ∼50 nm Si-dots were grown and formed Si-dots/SiC/Si-dots/SiC/Si(100). By repeating these SiC and Si-dots growths, polycrystalline SiC/Si-dots multilayer was formed on Si(100).