High electron mobility with significant spin-orbit coupling in rock-salt YbO epitaxial thin film
High electron mobility with significant spin-orbit coupling in rock-salt YbO epitaxial thin film
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DOI：
10.1063/1.5085938
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发表时间：
2019-04
影响因子：
4
通讯作者：
Taku Yamamoto;K. Kaminaga;Daichi Saito;D. Oka;T. Fukumura
中科院分区：
文献类型：
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作者：
Taku Yamamoto;K. Kaminaga;Daichi Saito;D. Oka;T. Fukumura
研究了用脉冲激光淀积法生长的Yb ~（2+）（4f 145 d ~ 0）价态的一氧化镱（YbO）外延薄膜的光学和电学性质。从吸收光谱确定的0.25 eV的窄带隙和大的晶体场分裂的5d轨道的YbO是与镱单硫族化物（YbChs）的化学趋势一致。电阻率是可调的电子掺杂后，通过引入氧空位。室温下的电子迁移率随着电子载流子密度的增加而增加到1.13 cm 2 V−1 s−1。重电子掺杂的YbO在低温下表现出较弱的反局域化，表明由于重Yb核的存在，YbO具有显著的自旋轨道耦合.本文研究了用脉冲激光沉积法生长的Yb ~（2+）（4f 145 d 0）价态的一氧化镱（YbO）外延薄膜的光学和电学性质.从吸收光谱确定的0.25 eV的窄带隙和大的晶体场分裂的5d轨道的YbO是与镱单硫族化物（YbChs）的化学趋势一致。电阻率是可调的电子掺杂后，通过引入氧空位。室温下的电子迁移率随着电子载流子密度的增加而增加到1.13 cm 2 V−1 s−1。重电子掺杂的YbO在低温下表现出弱的反定域性，表明由于重Yb核而产生的显著的自旋-轨道耦合。
We studied the optical and electrical properties of ytterbium monoxide (YbO) epitaxial thin films with unusual Yb2+ (4f145d0) valence grown by the pulsed laser deposition method. The narrow bandgap of 0.25 eV and the large crystal field splitting of 5d orbitals in YbO determined from absorption spectra were consistent with the chemical trends of ytterbium monochalcogenides (YbChs). Electrical resistivity was tunable upon electron doping via introduction of oxygen vacancies. Electron mobility at room temperature increased up to ∼13 cm2 V−1 s−1 with increasing electron carrier density. The heavily electron-doped YbO showed weak antilocalization at low temperature, suggesting significant spin-orbit coupling owing to the heavy Yb nucleus.We studied the optical and electrical properties of ytterbium monoxide (YbO) epitaxial thin films with unusual Yb2+ (4f145d0) valence grown by the pulsed laser deposition method. The narrow bandgap of 0.25 eV and the large crystal field splitting of 5d orbitals in YbO determined from absorption spectra were consistent with the chemical trends of ytterbium monochalcogenides (YbChs). Electrical resistivity was tunable upon electron doping via introduction of oxygen vacancies. Electron mobility at room temperature increased up to ∼13 cm2 V−1 s−1 with increasing electron carrier density. The heavily electron-doped YbO showed weak antilocalization at low temperature, suggesting significant spin-orbit coupling owing to the heavy Yb nucleus.