Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates
Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates
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GaAs (311)B 基底上自组织应变 InGaAs 量子盘（直径 200-30 nm）在室温下发出强光致发光
DOI：
10.1063/1.113021
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发表时间：
1994
影响因子：
4
通讯作者：
T. Tamamura
中科院分区：
文献类型：
--
作者：
R. Nötzel;J. Temmyo;H. Kamada;T. Furuta;T. Tamamura
我们最近发现，通过金属有机气相外延将在GaAs（311）B衬底上生长的一系列AlGaAs和应变InGaAs外延膜自发重组到埋在AlGaAs下的InGaAs岛（盘）中，形成了量子盒状结构。在200-30 nm范围内的In含量直接控制盘的尺寸。在这些应变量子盘在室温下观察到强的光致发光（PL）效率。即使对于30 nm盘，与参考（100）量子阱相比，辐射效率也没有降低。激发光谱中的激子共振峰具有窄线宽和高分辨的特征。
We have recently found that quantum‐box‐like structures are formed during spontaneous reorganization of a sequence of AlGaAs and strained InGaAs epitaxial films grown on GaAs (311)B substrates by metalorganic vapor‐phase epitaxy into InGaAs islands (disks) buried beneath AlGaAs. The size of the disks is directly controlled by the In content in the range 200–30 nm. Strong photoluminescence (PL) efficiency at room temperature is observed in these strained quantum disks. Even for the 30 nm disk the radiative efficiency is not reduced compared to the reference (100) quantum well. The PL spectra are characterized by narrow linewidth and well resolved exciton resonances in excitation spectroscopy.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H