High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
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DOI：
10.1109/led.2004.841442
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发表时间：
2005-01
影响因子：
4.9
通讯作者：
T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka;N. Sugiyama;Y. Moriyama;S. Takagi
中科院分区：
文献类型：
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作者：
T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka;N. Sugiyama;Y. Moriyama;S. Takagi
我们证明，第一次，成功的肖特基势垒源/漏（S/D）绝缘体上锗（GOI）MOSFET，其中埋氧和硅衬底分别用作栅极电介质和底部栅电极。在积累模式下，采用锗化铂源极/漏极的p型MOSFET具有优异的性能。对于具有SiO/sub 2/-Ge界面的积累型GOI沟道，其空穴迁移率比一般的Si MOSFET的空穴迁移率提高了50%/spl sim/40%.
We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%/spl sim/40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO/sub 2/-Ge interface.