Design and realization of high-power DFB lasers

Design and realization of high-power DFB lasers
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DOI:
10.1117/12.569039
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发表时间:
2004-12
期刊:
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影响因子:
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通讯作者:
H. Wenzel;A. Klehr;M. Braun;F. Bugge;G. Erbert;J. Fricke;A. Knauer;P. Ressel;B. Sumpf;M. Weyers;G. Traenkle
H. Wenzel;A. Klehr;M. Braun;F. Bugge;G. Erbert;J. Fricke;A. Knauer;P. Ressel;B. Sumpf;M. Weyers;G. Traenkle
中科院分区:
其他
文献类型:
--
作者:
H. Wenzel;A. Klehr;M. Braun;F. Bugge;G. Erbert;J. Fricke;A. Knauer;P. Ressel;B. Sumpf;M. Weyers;G. Traenkle

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介绍了高功率砷化镓脊波导分布反馈激光器的研究进展。激光在TM或TE偏振中发射760 nm和980 nm之间。在大电流范围内,激光器在单一横向和纵向模式下表现出稳定的运行。在室温下,最大连续波输出功率约为400 mW,谱线宽度低于1 MHz,侧模抑制比大于50 dB。分布反馈由嵌入p-AlGaAs包层的InGaP/GaAsP/InGaP多层结构中的一阶或二阶光栅提供。讨论了这种波长稳定器件在非线性变频、光谱学和原子跃迁激发中的应用。
The development of high-power GaAs-based ridge wave guide distributed feedback lasers is described. The lasers emit between 760 nm and 980 nm either in TM or TE polarization. Over a large current range, the lasers exhibit stable operation in a single transversal and longitudinal mode. A maximum continuous-wave output power of about 400 mW, a spectral linewidth below 1 MHz and a side mode suppression ratio greater than 50 dB have been demonstrated at room temperature. The distributed feedback is provided by first or second order gratings, formed in an InGaP/GaAsP/InGaP multilayer structure embedded into the p-AlGaAs cladding layer. Applications of such wavelength stabilized devices in non-linear frequency conversion, spectroscopy and for excitation of atomic transitions are discussed.