Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system
Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system
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DOI：
10.1039/c7tc05375d
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发表时间：
2017
影响因子：
6.4
通讯作者：
S. Ye;T. Nozaki;Y. Kotani;K. Toyoki;Tetsuya Nakamura;Syougo Yonemura;Shibata Tatsuo;S. Pati;M. Al-Mahdawi;Y. Shiokawa;M. Sahashi
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作者：
S. Ye;T. Nozaki;Y. Kotani;K. Toyoki;Tetsuya Nakamura;Syougo Yonemura;Shibata Tatsuo;S. Pati;M. Al-Mahdawi;Y. Shiokawa;M. Sahashi
在磁电开关反铁磁体/铁磁体交换偏置薄膜系统中，通常在Cr2 O3和铁磁体之间制造插入金属（IM）层（例如Pt、Ru或Cr）。IM层用作“间隔层”以防止Co的氧化并提高阻挡温度。在这项工作中，我们发现这些薄膜系统的磁性能根据IM的类型而变化，并且它们可以通过Co和IM薄膜的双层或多层来再现。我们还发现，IM层的自旋极化的Co铁磁层的基础上的X射线磁性圆二色性数据。这些结果表明，IM不单独工作作为一个“间隔层”，而是它是一个不可分割的组成部分的钴基堆叠铁磁薄膜的磁电开关Cr2 O3/铁磁交换偏置系统。此外，我们发现，一些堆叠的铁磁薄膜容易表现出低的单向各向异性能（Jk），这可能是一个很好的方式来降低反铁磁体的磁电开关能量的实际设备应用。
An inserted metal (IM) layer (such as Pt, Ru, or Cr) is typically fabricated between Cr2O3 and the ferromagnet in magnetoelectric switched antiferromagnet/ferromagnet exchange-biased thin film systems. The IM layer is used as a “spacer layer” to prevent oxidization of Co and enhance the blocking temperature. In this work, we found that the magnetic properties of these thin film systems vary depending on the type of IM, and they could be reproduced by bilayers or multilayers of Co and IM thin films. We also found that the IM layer was spin-polarized by the Co ferromagnetic layer based on X-ray magnetic circular dichroism data. These results suggest that the IM does not work separately as a “spacer layer”, but rather it is an integral component of Co-based stacked ferromagnetic films in magnetoelectric switched Cr2O3/ferromagnet exchange-biased systems. Furthermore, we found that some stacked ferromagnetic films easily exhibit a low unidirectional anisotropy energy (Jk), which may be a good way to decrease the magnetoelectric switching energy of antiferromagnets for practical device applications.