Effect of Al doping on the electric and dielectric properties of CaCu3Ti4O12
Effect of Al doping on the electric and dielectric properties of CaCu3Ti4O12
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DOI：
10.1111/j.1551-2916.2007.01983.x
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发表时间：
2007-12-01
影响因子：
3.9
通讯作者：
Kim, Young-Min
中科院分区：
文献类型：
--
作者：
Choi, Sung-Woo;Hong, Seong-Hyeon;Kim, Young-Min
采用固相反应法制备了Al掺杂的CaCu 3 Ti4-xAlxO 12-x/2（CCTO，x=0 ~ 0.1）陶瓷，并对其电性能和介电性能进行了研究。Al掺杂已被证明在保持高介电常数的同时显著降低介电损耗。在x=0.06时，在10（2）-10（4）Hz的频率范围内损耗角正切（tan δ）低于0.06，在10 kHz时介电常数为41 000。阻抗谱表明，Al掺杂的晶界电阻率增加了一个数量级。Al掺杂的CTO的介电损耗的改善归因于晶界电阻率的提高。
Al-doped CaCu3Ti4-xAlxO12-x/2 (CCTO, x=0-0.1) ceramics were prepared by the solid-state reaction, and their electric and dielectric properties were investigated. Al doping has been shown to reduce the dielectric loss remarkably while maintaining a high dielectric constant. At x=0.06, the loss tangent (tan delta) was below 0.06 over the frequency range of 10(2)-10(4) Hz, and the dielectric constant was 41 000 at 10 kHz. Impedance spectra indicated that Al doping increased the resistivity of the grain boundary by an order of magnitude. The improvement of the dielectric loss in Al-doped CCTO was attributed to the enhanced grain boundary resistivity.