Deposition of Pentacene Thin Film on Polydimethylsiloxane Elastic Dielectric Layer for Flexible Thin-Film Transistors
Deposition of Pentacene Thin Film on Polydimethylsiloxane Elastic Dielectric Layer for Flexible Thin-Film Transistors
复制标题
DOI：
10.1109/led.2017.2714845
复制
发表时间：
2017-06
影响因子：
4.9
通讯作者：
Shujun Zhou;Mingxuan Li;Q. Tang;Zhiqi Song;Y. Tong;Yichun Liu
中科院分区：
文献类型：
--
作者：
Shujun Zhou;Mingxuan Li;Q. Tang;Zhiqi Song;Y. Tong;Yichun Liu
采用真空沉积法在弹性聚二甲基硅氧烷（PDMS）介质层上制备了均匀致密的并五苯薄膜。氧（O2）等离子体处理，然后十八烷基三氯硅烷（OTS）蒸汽处理被发现是重要的并五苯薄膜的成功沉积具有大晶粒尺寸，因此高场效应迁移率。在O2等离子体处理100 s和OTS处理7 h的优化条件下，得到的并五苯基有机薄膜晶体管（OTFT）的最高迁移率为0.65 cm $^{2} V ^{-1} s}^{-1}$。在此基础上，成功制备了基于PDMS介质层的柔性并五苯OTFT。这封信开辟了PDMS作为真空沉积器件制造的电介质层的能力，为未来的大规模柔性和保形电子器件展示了强大的潜力。
A novel method was applied to realize the uniform and dense pentacene thin film on the elastic polydimethylsiloxane (PDMS) dielectric layer via vacuum deposition. The oxygen (O2) plasma treatment followed by octadecyltrichlorosilane (OTS) vapor treatment was found to be important for the successful deposition of pentacene thin film with large grain size and hence high field-effect mobility. The highest mobility of the obtained pentacene-based organic thin-film transistors (OTFTs) was 0.65 cm $^{2}\text{V}^{-1}\text{s}^{-1}$ at the optimized condition with O2 plasma treatment of 100 s and OTS treatment of 7 h. Furthermore, the flexible pentacene OTFTs based on PDMS dielectric layer were successfully fabricated. This letter opens up the capability of PDMS as dielectric layer for the fabrication of the vacuum-depositeddevices, exhibiting a strong potential for future large-scale flexible and conformal electronics.