The mechanism of low-k SiOCH film modification by oxygen atoms
The mechanism of low-k SiOCH film modification by oxygen atoms
复制标题
氧原子修饰低k SiOCH薄膜的机理
DOI：
--
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Baklanov
中科院分区：
文献类型：
--
作者：
O. V. Braginsky;A. Kovalev;D. Lopaev;E. Malykhin;Y. Mankelevich;T. Rakhimova;A. Rakhimov;A. Vasilieva;S. Zyryanov;M. Baklanov
研究了三种等离子体增强化学气相沉积Low-k SiOCH薄膜与氧原子的相互作用。在为本研究设计的专用实验系统中，在远等离子体余辉条件下对样品进行了O原子处理。该实验系统可以避免离子和真空紫外线(VUV)光子对表面反应的影响，并控制样品上的氧原子浓度。用傅里叶变换红外光谱、X射线荧光和原子力显微镜技术分析了低k薄膜中发生的变化。建立了包括穿透、复合和与甲基反应在内的O原子与低k物质相互作用的蒙特卡罗模型。结果表明，O原子在孔壁表面的复合决定了O原子在薄膜中的分布和穿透深度。O原子与甲基的反应几率较低，因此以背景模式进行。
The interaction of oxygen atoms with three types of plasma enhanced chemical vapor deposition low-k SiOCH films is studied. The samples were treated by O atoms in the far plasma afterglow conditions in a special experimental system designed for this study. The experimental system allowed avoiding the effect of ions and vacuum ultraviolet (VUV) photons on surface reactions and controlling the oxygen atom concentration over the samples. Fourier-transform infrared spectroscopy, x-ray fluorescence, and atomic force microscopy techniques were used to analyze the changes occurring in low-k films. Monte Carlo model for O atom interaction with low-k material that includes penetration, recombination, and reactions with methyl groups was developed. It is shown that the surface recombination on the pore wall surface determines the profile and penetration depth of O atoms into the films. The reaction of O atoms with methyl groups has lower probability and therefore proceeds in the background mode.