Growth of β‐SiC film by pyrolysis of polyimide Langmuir–Blodgett films on silicon
Growth of β‐SiC film by pyrolysis of polyimide Langmuir–Blodgett films on silicon
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DOI：
10.1063/1.359092
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发表时间：
1995-06
影响因子：
3.2
通讯作者：
Beifang Yang;W. Cai;Ping-sheng He;Yongning Sheng;Bang-kun Jin;Y. Ruan;Keliang Hu;Yunlan Huang;Gui-en Zhou
中科院分区：
文献类型：
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作者：
Beifang Yang;W. Cai;Ping-sheng He;Yongning Sheng;Bang-kun Jin;Y. Ruan;Keliang Hu;Yunlan Huang;Gui-en Zhou
在500-1000 °C的真空条件下，研究了聚酰亚胺LB膜在硅衬底上的异质外延生长。SiC薄膜在700 °C以上的温度下生长。SiC薄膜的生长速率和SiC形成的起始温度都受到硅衬底取向的影响。SiC薄膜的生长速率随着温度的升高而增加，并受Si与含C反应物的反应控制。通过与浸涂聚酰亚胺膜的比较，发现SiC层的结晶度取决于聚酰亚胺膜中分子排列的有序度。聚酰亚胺LB膜具有高度有序的超晶格结构，有利于SiC单晶薄膜的生长。
The heteroepitaxial growth of β‐SiC has been studied by pyrolysis of polyimide Langmuir–Blodgett films on silicon substrate in the temperature range 500–1000 °C in vacuum. Thin SiC films have been grown at temperatures above 700 °C. Both the onset temperature of the SiC formation and the growth rate of the SiC films were affected by the orientation of the silicon substrates. The growth rate of the SiC films increased with temperature and was controlled by the reaction of Si with C‐containing reactants. By comparison with dip‐coating polyimide films, it was found that the crystallinity of the SiC layers depended on the degree of order of the molecular arrangement in the polyimide films. Highly ordered superlattice structures of polyimide LB films favored the growth of single crystal SiC films.