Improved antireflection properties and optimized structure for passivation of well-separated, vertical silicon nanowire arrays for solar cell applications
Improved antireflection properties and optimized structure for passivation of well-separated, vertical silicon nanowire arrays for solar cell applications
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改进的抗反射性能和优化的结构，用于太阳能电池应用中分离良好的垂直硅纳米线阵列的钝化
DOI：
10.1016/j.solmat.2014.03.026
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发表时间：
2014
影响因子：
6.9
通讯作者：
Ji Guangbin
中科院分区：
文献类型：
--
作者：
Zuo Zewen;Zhu Kai;Cui Guanglei;Huang Wanxia;Qu Jun;Shi Yi;Liu Yousong;Ji Guangbin
通过阳极氧化铝模板和金属辅助化学蚀刻的结合，然后进行超临界干燥，制备了具有优异抗反射性能的大面积、分离良好、垂直排列的硅纳米线（SiNW）阵列。与自然干燥的圆锥台结构阵列相比，在 200-600 nm 波长范围内实现了低于 1% 的反射率，在 200-1000 nm 范围内观察到平均反射率降低了 23%。此外，分离良好的SiNW阵列极大地促进了SiNW表面上等离子增强化学气相沉积非晶硅层的保形涂层，这可能导致表面态的有效钝化。因此，这种分离良好且垂直排列的SiNW阵列在太阳能电池应用中非常有前景。
Large-area, well-separated, and vertically aligned silicon nanowire (SiNW) arrays with excellent antireflection properties were fabricated through a combination of anodic aluminum oxide template and metal-assisted chemical etching, followed by supercritical drying. Less than 1% reflectance was achieved over the wavelength range of 200–600 nm, and 23% reduction in average reflectance was observed over the 200–1000 nm range, compared with the conical-frustum structure array by natural drying. Furthermore, the well-separated SiNW arrays considerably facilitated the conformal coating of the plasma-enhanced chemical vapor deposited amorphous silicon layer on the SiNW surface, which could result in effective passivation of surface states. Therefore, such well-separated and vertically aligned SiNW arrays are highly promising for solar cell application.