1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
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DOI：
10.1109/led.2023.3282025
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发表时间：
2023-07
影响因子：
4.9
通讯作者：
Yuan Qin;M. Xiao;Ruizhe Zhang;Q. Xie;Tomás Palacios;Boyan Wang;Yunwei Ma;I. Kravchenko;Dayrl P. Briggs;D. Hensley;B. Srijanto;Yuhao Zhang
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文献类型：
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作者：
Yuan Qin;M. Xiao;Ruizhe Zhang;Q. Xie;Tomás Palacios;Boyan Wang;Yunwei Ma;I. Kravchenko;Dayrl P. Briggs;D. Hensley;B. Srijanto;Yuhao Zhang
这项工作展示了6英寸Si衬底上的准垂直GaN肖特基势垒二极管（sbd），击穿电压（BV）超过1 kV，这是迄今为止报道的垂直GaN-on-Si sbd的最高BV。利用准垂直器件固有的深平台形成自对准边缘终端，平台侧壁被p型氧化镍（NiO）覆盖，形成还原表面场（RESURF）结构。这种新颖的端接实现了2.8 MV/cm的平行平面结电场。该器件的低导通电压为0.5 V，比导通电阻为1.1 $\text{m}\Omega \cdot $ cm2。此外，在无箝位电感开关测试中，该器件在连续800 V应力下表现出优异的过电压稳健性。这些结果显示了低成本垂直GaN-on-Si功率二极管的良好前景。
This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 $\text{m}\Omega \cdot $ cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.