Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution
Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution
复制标题
弹道电子发射显微镜（BEEM）：以纳米分辨率研究金属/半导体界面
DOI：
10.1016/0370-1573(94)00082-e
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
M. Prietsch
中科院分区：
文献类型：
--
作者：
M. Prietsch
弹道电子发射显微镜 (BEEM) 是一种基于扫描隧道显微镜的相对较新的技术，用于研究具有纳米级横向分辨率的界面处的潜在台阶。到目前为止，BEEM主要应用于金属/半导体界面。在本文中，将介绍该技术及其机遇，并对肖特基势垒高度、散射效应和金属/半导体界面均匀性的实验结果进行详细概述。此外，还将给出描述 BEEM 中电子传输的理论背景。还将介绍相关系统的研究，例如半导体异质结或层内界面。
Ballistic-electron emission microscopy (BEEM) is a relatively new technique, based on the scanning-tunneling microscope, to study potential steps at interfaces with a lateral resolution in the nanometer scale. Up to now, BEEM has mainly been applied to metal/semiconductor interfaces. In this article, the technique and its opportunities will be presented, and a detailed overview will be given over the experimental results on Schottky-barrier heights, scattering effects, and the homogeneity of metal/semiconductor interfaces. Furthermore, the theoretical background for the description of electron transport in BEEM will be given. Studies of related systems, like semiconductor heterojunctions or interfaces with intralayers, will also be presented.