Total Ionizing Dose Influence on the Single Event Multiple-Cell Upsets in 65nm 6-T SRAM
Total Ionizing Dose Influence on the Single Event Multiple-Cell Upsets in 65nm 6-T SRAM
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总电离剂量对 65nm 6-T SRAM 中单粒子多单元扰动的影响
DOI：
10.1109/tns.2018.2875451
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发表时间：
--
影响因子：
1.8
通讯作者：
郭旗
中科院分区：
文献类型：
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作者：
郑齐文;崔江维;陆妩;郭红霞;刘杰;余学峰;王亮;刘家齐;何承发;任迪远;岳素格;赵元富;郭旗
我们研究了总电离剂量（TID）对65 nm 6-T静态随机存取存储器单粒子多单元翻转（MCU）的影响，发现TID增强了器件的MCU灵敏度。由pMOSFET（p-hits）或nMOSFET（n-hits）中的粒子撞击引起的MCU通过MCU图案来区分。对MCU模式的分析表明，TID对p-hits MCU和n-hits MCU都有增强作用，但增强机制不同。n-hits MCU的增强是由于上拉pMOSFET的正阈值电压偏移（$\Delta V$ th），而p-hits MCU通过由浅沟槽隔离中捕获的氧化物捕获电荷（Not）引起的p阱接触的等效电阻的增加而增强。
We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by particle strike in pMOSFET (p-hits) or nMOSFET (n-hits) is distinguished by the MCU pattern. Analysis of MCU pattern shows that both p-hits MCU and n-hits MCU are enhanced by TID, and they have different mechanisms. Enhancement of n-hits MCU is due to the positive threshold voltage shift ( $\Delta V$ th) of the pull-up pMOSFET, while p-hits MCU is strengthened by the increase in the equivalent resistance of p-well contacts caused by oxide-trapped charges (Not) trapped in the shallow trench isolation.