High‐Temperature Dielectrics in the BiScO3–BaTiO3–(K1/2Bi1/2)TiO3 Ternary System
High‐Temperature Dielectrics in the BiScO3–BaTiO3–(K1/2Bi1/2)TiO3 Ternary System
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DOI:
10.1111/j.1551-2916.2009.02973.x
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发表时间:
2009-03
影响因子:
3.9
通讯作者:
J. Lim;Shujun Zhang;Namchul Kim;T. Shrout
中科院分区:
文献类型:
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作者:
J. Lim;Shujun Zhang;Namchul Kim;T. Shrout
Perovskite solid solution in the (1−x)[0.4BiScO3–0.6BaTiO3]+x (K1/2Bi1/2)TiO3 [BSBT–KBTx] system was synthesized using conventional sintering and hot-isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and frequency for potential use of high-temperature capacitors. The BSBT ceramics with KBT exhibited high dielectric permittivities (ɛr) (>1700 at RT) and low dielectric loss over the temperature range from 100° to 300°C, with flat temperature coefficients of permittivity (TCɛs). In addition, BSBT ceramics with increasing KBT were observed to possess dielectric relaxation characteristics at temperatures (>RT) as observed in lead-based relaxors. Furthermore, high energy densities, being on the order of 4.0 J/cm3 at 220 kV/cm was observed for the BSBT–KBT20 ceramics from the electric-field polarization behavior.