Bi deficiencies induced high permittivity in lead-free BNBT–BST high-temperature dielectrics
Bi deficiencies induced high permittivity in lead-free BNBT–BST high-temperature dielectrics
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DOI：
10.1016/j.jallcom.2014.12.022
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发表时间：
2015-04
影响因子：
6.2
通讯作者：
Jing Shi;H. Fan;Xiao Liu;Yuan Ma;Qiang Li
中科院分区：
文献类型：
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作者：
Jing Shi;H. Fan;Xiao Liu;Yuan Ma;Qiang Li
研究了由0.94（Bi0.5Na0.5）TiO 3 -0.06BaTiO3（BNT-BT）母相的准同型相界（MPB）衍生的（Bi0.5−yNa0.5）0.94−xBa0.06（Bi0.2Sr0.7□0.1）xTiO 3（BNBT-BST）陶瓷的电学和介电性能。对于所有的组合物，形成的伪立方结构没有明显的第二相。Bi的缺乏对BNBT-BST陶瓷的介电常数有显著的影响。在温度变化过程中，形成了一个高介电常数的平台，其介电常数为5000，变化很小，这表明高温超导体具有潜在的用途。通过由复阻抗（Z′/Z″）计算体电导率，研究了氧空位对不同气氛下介电响应的影响。在Bi不足的BNBT-BST陶瓷的再氧化之后，工作温度范围从50 °C到300 °C以10%的介电常数变化被拓宽。
The electric and dielectric properties of (Bi0.5−yNa0.5)0.94−xBa0.06(Bi0.2Sr0.7□0.1)xTiO3(BNBT–BST) ceramics, derived from the morphotropic phase boundary (MPB) of the parent matrix 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3(BNT–BT), are studied. The pseudocubic structures are formed without apparent secondary phases for all the compositions. The Bi deficiency displays significant effect on the dielectric permittivity of BNBT–BST ceramics. A plateau of high permittivity ∼5000 in the temperature evolution is formed with small variation, indicating the potential use for the high-temperature dielectrics. The bulk conductivity, calculated from the complex impendence (Z′/Z″), is conducted to learn the influence of the oxygen vacancies on the dielectric response in different atmospheres. After the re-oxidation of the Bi deficient BNBT–BST ceramics, the operational temperature range is broadened with 10% variation in permittivity from 50 °C to 300 °C.