In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
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DOI：
10.1063/1.2968442
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发表时间：
2008-08-01
影响因子：
3.2
通讯作者：
Speck, J. S.
中科院分区：
文献类型：
--
作者：
Fernandez-Garrido, S.;Koblmueller, G.;Speck, J. S.
分析了纤锌矿 (0001) 取向 GaN 的热分解：在真空中、在活性 N 暴露下以及在射频等离子体辅助分子束外延生长过程中。 GaN 分解速率是通过使用原位四极杆质谱法测量 Ga 解吸来确定的，其显示出阿伦尼乌斯行为，表观活化能为 3.1 eV。反射高能电子衍射测量期间强度振荡的清晰特征有助于对分解速率进行补充评估，并突出了真空中的逐层分解模式。无论是在真空下还是在富氮生长条件下的生长过程中，暴露于活性氮中都大大减少了由于 GaN 分解而导致的 GaN 损失。 (C) 2008 年美国物理研究所。
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition. (C) 2008 American Institute of Physics.