Activation of boron-dopant atoms in ion-implanted diamonds.
Activation of boron-dopant atoms in ion-implanted diamonds.
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离子注入金刚石中硼掺杂原子的激活。
DOI：
10.1103/physrevb.38.5576
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Prins
中科院分区：
文献类型：
--
作者：
Prins
在液氮温度下，将不同比例的硼碳离子注入到金刚石中。在注入之后，通过将金刚石落在位于垂直管式炉中的平台上将它们加热到500 ℃，然后退火1小时。随后在氩气氛中在1200 ℃下进一步退火。结果发现，在适当的条件下，可以获得与天然半导体金刚石中发现的那些相关的光学和电学性质。例如，热激活的导电可以建立在0.37eV的激活能下，其对应于金刚石中替代硼受体的测量值。由于所使用的退火循环，相对大量的由辐射损伤产生的产物仍然存在，这在碳离子注入的金刚石中表现为在短波长处的光吸收增加。结果表明，负责这种吸收的产品可能是作为一个施主中心位于导带以下约4 eV。热电动势测量与价带中空穴的运动相关。
Different ratios of boron to carbon ions were implanted into diamond maintained at liquid-nitrogen temperature. After implantation, the diamonds were heated to 500 C by dropping them onto a platform situated in a vertical tube furnace, and then annealed for 1 h. This was followed by a further anneal at 1200 C in an argon atmosphere. It was found that under suitable conditions optical and electrical properties could be obtained which correlated with those found in natural semiconducting diamond. Thermally activated electrical conduction could, for instance, be established at an activation energy of∼ 0.37 eV, which corresponds to the value measured for substitutional boron acceptors in diamond. Owing to the annealing cycle used, a relatively large amount of products resulting from radiation damage remained, which, in the carbon-ion-implanted diamond, manifested itself by increased optical absorption at short wavelengths. The results indicate that the product responsible for this absorption may be acting as a donor center situated at about 4 eV below the conduction band. Thermal electromotive-force measurements correlate with the movement of holes in the valence band.