Passivation of MXene via atomic layer deposition of SnO2 to achieve improved NO2 sensing
Passivation of MXene via atomic layer deposition of SnO2 to achieve improved NO2 sensing
复制标题
DOI：
10.1063/5.0175767
复制
发表时间：
2023-10
影响因子：
4
通讯作者：
Lihao Zhou;Yinhua Hu;Shaobo Li;Xianghong Liu;Jun Zhang
中科院分区：
文献类型：
--
作者：
Lihao Zhou;Yinhua Hu;Shaobo Li;Xianghong Liu;Jun Zhang
MXene是室温下气体传感器等低功耗电子器件的理想候选材料。然而，实现快速响应和完全恢复，同时解决由于MXene氧化引起的基线漂移问题对MXene传感器来说是一个挑战。本文通过原子层沉积（ALD）钝化Ti3C2Tx MXene，展示了一种通用策略。MXene上丰富的羟基导致MXene氧化，有利于SnO2的高效沉积。气体传感器测试表明，钝化MXene@SnO2对20 ppm NO2的响应为35.2%，约为纯MXene的3倍。重要的是，对NO2的响应时间快至18s，并在27s内完全恢复到基线。我们的策略强调了利用ALD技术开发基于mxene的气体传感器的前景。
MXene is a promising candidate for low power electronic devices, such as gas sensor at room temperature. However, achieving rapid response and complete recovery and simultaneously addressing the issue of baseline drift due to the oxidation of MXene are challenging for MXene sensors. Herein, we demonstrate a general strategy by using atomic layer deposition (ALD) to passivate Ti3C2Tx MXene. The abundant hydroxyl groups on MXene, which could lead to the oxidation of MXene, facilitate efficient deposition of SnO2. Gas sensor tests reveal that the passivated MXene@SnO2 exhibits a response of 35.2% to 20 ppm NO2, which is approximately three times higher than that of pure MXene. Importantly, the response time to NO2 was as fast as 18 s, with full and complete recovery to baseline within 27 s. Our strategy highlights the prospects of utilizing ALD technique for the development of MXene-based gas sensors.