Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions
Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions
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DOI：
10.1016/j.orgel.2014.04.032
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发表时间：
2014-08
影响因子：
3.2
通讯作者：
Chuan Liu;Yong Xu;Zhihong Liu;H. N. Tsao;K. Müllen;T. Minari;Yong‐Young Noh;H. Sirringhaus
中科院分区：
文献类型：
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作者：
Chuan Liu;Yong Xu;Zhihong Liu;H. N. Tsao;K. Müllen;T. Minari;Yong‐Young Noh;H. Sirringhaus
溶液处理型有机场效应晶体管（OFFET）需要适当的金属接触以改善注入和迁移率，以及平衡空穴迁移率以构建逻辑电路单元。我们解决这两个不同的问题，通过一个简单的技术转移印刷。与蒸发Au接触相比，在基于Terrylene的半导体（TDI）上的转移印刷Au接触显著地降低了5.6 V/dec的反向亚阈值斜率，并且提高了超过5倍的线性迁移率。因此，具有高功函数金属（Au）的器件与具有低功函数金属（Al和Ca）的器件相当，表明转印电极在电子注入中的基本优点。我们还转移印刷聚（3-己基噻吩）（P3 HT）层到TDI上构建的双沟道双极晶体管的溶液过程中的第一次。该晶体管即使在具有对称Au电极的共面结构中也表现出平衡的空穴和电子迁移率（3.0 × 10− 3和2.8 × 10− 3cm 2 V − 1 s −1）。该技术对于实现新材料的本征迁移率特别有用，并且能够显著扩大用于溶液处理的功能异质结OFFET的材料槽。
Solution-processedn-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6 V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0 × 10−3and 2.8 × 10−3cm2V−1s−1) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs.