Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.
Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.
复制标题
DOI：
10.1038/srep45344
复制
发表时间：
2017-03-27
影响因子：
4.6
通讯作者：
Oliver RA
中科院分区：
文献类型：
--
作者：
Zhu T;Liu Y;Ding T;Fu WY;Jarman J;Ren CX;Kumar RV;Oliver RA
分布式布拉格反射器(DBR)是发展光电子器件的重要组成部分。对于许多器件应用，不仅需要高反射率和低吸收，而且需要良好的导电性以允许有效的电荷注入。在这里，我们展示了高反射和高导电非极性氮化镓(GaN)DBR的晶片规模制备，该DBR由晶格完全匹配的非极性(11-20)GaN层和介孔GaN层组成，这些层是通过简单的一步电化学刻蚀方法获得的，而不需要任何额外的工艺步骤。GaN/介孔GaN DBR在整个可见光范围内表现出高的峰值反射率(>；96%)和较宽的光谱阻带宽度(>；80 nm)，同时保持了材料的质量和良好的导电性。这样的介孔GaN DBRS为高性能的GaN基光电子、光子和量子光子器件提供了一个有前途的、可扩展的平台。
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.