>1 MW peak power single-mode high-brightness passively Q-switched Nd3+:YAG microchip laser
>1 MW peak power single-mode high-brightness passively Q-switched Nd3+:YAG microchip laser
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DOI：
10.1364/oe.16.019891
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发表时间：
2008-11-24
期刊：
影响因子：
3.8
通讯作者：
Taira, Takunori
中科院分区：
文献类型：
--
作者：
Sakai, Hiroshi;Kan, Hirohumi;Taira, Takunori
研制了一种高亮度二极管端面泵浦的Cr ~（4+）：YAG可饱和吸收体（SA）被动调Q的Nd：YAG微片激光器。在理论验证的基础上，研究了提高峰值功率的脉冲能量和脉宽的关系。结果，峰值功率超过1.2MW，M-2 = 1.04，并且在100 Hz的重复率下光谱宽度Δ λ < 5.1 μ m。以2.3W的平均供电功率获得98 TW的亮度/sr.cm（2）。峰值功率增加到2.1兆瓦，M-2 = 1.36。峰值功率为1.7兆瓦，从2厘米直径× 5厘米长的单片激光头。(c)2008年美国光学学会
A high-brightness diode end-pumped Nd:YAG microchip laser, passively Q-switched by a Cr4+:YAG saturable absorber (SA), has been developed. The dependences of pulse energy and width were investigated based on theoretical verification to enhance the peak power. As a result, the peak power exceeded 1.2 MW with M-2 = 1.04 and spectrum width Delta lambda < 5.1 pm at a repetition rate of 100 Hz. Brightness of 98 TW/sr.cm(2) was obtained with a supplied average electrical power of 2.3 W. The peak power increased up to 2.1 MW with M-2 = 1.36. Peak power of 1.7 MW was obtained from a 2-cm-diameter x 5-cm-long monolithic laser head. (c) 2008 Optical Society of America