Excellent antireflection properties of vertical silicon nanowire arrays
Excellent antireflection properties of vertical silicon nanowire arrays
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DOI：
10.1016/j.solmat.2010.02.033
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发表时间：
2010-09
影响因子：
6.9
通讯作者：
S. Srivastava;D. Kumar;P. K. Singh;M. Kar;Vikram Kumar;M. Husain
中科院分区：
文献类型：
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作者：
S. Srivastava;D. Kumar;P. K. Singh;M. Kar;Vikram Kumar;M. Husain
我们报道了一种简单的方法来制备成本有效的抗反射表面直接在硅片上，它由垂直排列的硅纳米线阵列（VA-SiNWA）。采用银诱导湿法化学腐蚀法在HF和AgNO 3溶液中对p型硅（100）衬底进行了室温下的大面积VA-SiNWA。发现Si线的长度（直径在50- 300 nm范围内）随蚀刻时间（0- 120 min）线性增加。观察到具有Si线的表面的反射率（Rλ）显著降低。在300- 600 nm波长范围内，对于12μm长的Si丝，Rλ值小于2%，优于各向异性织构表面或单层SiO2涂层的最佳Rλ值。VA-SiNWA表现为亚波长结构表面，可以在很大程度上抑制反射率。这种表面可能具有潜在的应用，作为硅太阳能电池的半导体表面。
We report a simple approach to prepare cost effective antireflective surface directly on silicon wafers, which consists of arrays of vertically aligned silicon nanowires (VA-SiNWA). Large area VA-SiNWA were realized by silver induced wet chemical etching of p-silicon (100) substrates in aqueous HF and AgNO3solution at room temperature. Length of Si wires (diameter in 50–300nm range) was found to increase linearly with etching time (0–120min). A remarkable reduction in reflectivity (Rλ) for surfaces with Si wires was observed. The value of Rλless than 2% was realized in the 300–600nm wavelength range in the case of ∼12μm long Si wires, a value better than the best Rλreported in anisotropically textured surface or single layer antireflection coatings. The VA-SiNWA behaves as a subwavelength structured surface that could suppress the reflectivity to a great extent. Such surfaces may have potential applications as antireflection surface for silicon solar cells.