The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT
The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT
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金属后退火对 AlGaN/GaN HEMT 直流和射频性能的影响
DOI：
10.1088/2631-8695/aca95f
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发表时间：
2022
影响因子：
1.7
通讯作者：
E. Ozbay
中科院分区：
文献类型：
--
作者：
Busra Cankaya Akoglu;D. Yılmaz;Gurur Salkım;E. Ozbay
研究了栅金属后退火（PMA）对AlGaN/GaN高电子迁移率晶体管（HEMT）直流和射频特性的影响。采用NANOTAM公司的0.5 μm栅长工艺制备了未退火和栅金属退火后的AlGaN/GaN HEMT器件。对于晶片之一，在氮气环境中在450 °C下进行PMA 10分钟。主要研究了PMA对HEMT的电学性能的影响，包括栅极电阻率、介电常数、小信号增益、输出功率（Pout）和阈值电压（Vth）漂移。结果表明，采用PMA工艺的HEMT的增益为18.5dB，而不采用PMA工艺的HEMT的小信号增益为21.8dB，这是因为PMA工艺增加了栅电阻Rg，降低了栅电阻gm。加入PMA的样品的大信号性能比未加入PMA的样品好，输出功率从20.9W提高到24.4W，提高了1.4W/mm。具有PMA的晶体管还展示了可靠的栅极性能和稳定的Vth，并且晶片具有更好的均匀性。
The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM’s 0.5 μm gate length technology. PMA was performed at 450 °C for 10 min in nitrogen ambient for one of the wafers. The main focus was the effect of PMA on the electrical performance of HEMTs, including gate resistivity, transconductance, small-signal gain, output power (Pout), and threshold voltage (Vth) shift. It is achieved that HEMT with PMA has a gain of 18.5 dB, while HEMT without PMA shows a small-signal gain of 21.8 dB, as the PMA process increases the gate resistance (Rg) and decreases the transconductance (gm). The large-signal performance of the sample with PMA is better than the one without PMA, having an increase of 1.4 W/mm in Po ut from 20.9 W to 24.4 W. The transistor with PMA also demonstrates a reliable gate performance and stable Vth, and the wafer exhibits better uniformity.