Electricalproperties of halogen-dopedCdTe layers on Si substrates grown bymetalorganic vapor phase epitaxy
Electricalproperties of halogen-dopedCdTe layers on Si substrates grown bymetalorganic vapor phase epitaxy
复制标题
有机金属气相外延硅衬底上卤素掺杂 CdTe 层的电性能
DOI：
10.1007/s11664-010-1241-1
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
H. Oka
中科院分区：
文献类型：
--
作者：
K.Yasuda;M. Niraula;H. Oka
介绍了使用碘和氯掺杂剂在硅衬底上生长的卤素掺杂 CdTe 层的电特性。使用氯作为掺杂剂时，没有观察到各层的电性能发生变化。然而，根据生长条件，即使将类似量的掺杂剂引入生长室，用碘掺杂也会导致高导电n型层或高电阻p型层。在 560°C 下生长的层，气相 Te/Cd 前驱体比率为 3.0，为 wep 型。对于低掺杂剂供应率，层的电阻率保持不变，但当掺杂剂供应率增加超过一定值时，电阻率突然增加。另一方面，在 325°C 下以 0.1 至 0.25 的 Te/Cd 比生长的层是类型的。在室温下获得的最大自由电子浓度为1.3×1017cm−3。生长层的类型和电导率很大程度上取决于生长条件。
Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductiven-type layers or highly resistivep-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, werep-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25 weren-type. A maximum free electron concentration of 1.3 × 1017cm−3was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.