The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
复制标题
扫描隧道显微镜研究Si(001)2×1表面热氧化的初始阶段
DOI：
10.1063/1.351912
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Masaaki Niwa Sumita
中科院分区：
文献类型：
--
作者：
M. Udagawa;Masaaki Niwa Sumita
用扫描隧道显微镜研究了Si(001)2×1表面热氧化的初始阶段。600℃的氧气暴露产生了硅岛和初始氧化物。氧化物以“暗点”、“点的序列”和“周围暗点”的形式出现。在氧化物中，大部分“暗点”通过600℃的连续加热被移除，而“点的序列”和“暗点周围的点”仍然存在。通过800℃的连续加热，所有的氧化物都被去除。根据这些位置讨论了Si(001)2×1表面的热氧化。
The initial stages of the thermal oxidation of Si(001)2×1 surface were studied by scanning tunneling microscopy. The O2 exposure at 600°C produced Si islands and initial oxides. The oxides appeared as “dark sites”, “sequence of dots”, and “dots with dark surroundings”. Among the oxides, most of the “dark sites” were removed by successive heating at 600°C, while the “sequence of dots” and the “dots with dark surroundings” remained. All the oxides were removed by successive heating at 800°C. The thermal oxidation of Si(001)2×1 surface is discussed in terms of these sites.
影响因子：
1.4
作者：
P. Avouris;I. Lyo;F. Bozsó
通讯作者：
P. Avouris;I. Lyo;F. Bozsó