Surfaces of silicon
Surfaces of silicon
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DOI：
10.1088/0034-4885/50/8/003
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发表时间：
1987-08
影响因子：
18.1
通讯作者：
D. Haneman
中科院分区：
文献类型：
--
作者：
D. Haneman
综述了几种清洁低折射率硅表面的结构和表面态的知识现状。它们是(100)面、(111)7*7面、(111)1*1面和(111)2*1解理面。并针对后者提出了一种新的模型。特别是在扫描隧道显微镜结果的帮助下，似乎有理由相信，上述大多数重建表面的结构现在都已被理解。除了回顾在清洁表面上使用的各种实验技术的结果外，还总结了气体覆盖和金属覆盖表面的结果。
The author reviews the current state of knowledge of the structure and surface states of several clean low-index faces of silicon. These are the (100) face, the (111) 7*7 face, the (111) 1*1 face and the (111) 2*1 cleavage face. A new model for the latter is also proposed. Aided particularly by scanning tunneling microscopy results there appears to be grounds for some confidence that the structures of most of the above reconstructed surfaces are now understood. In addition to reviewing results from a variety of experimental techniques used on clean surfaces, results for gas covered and metal covered surfaces are also summarised.