Thin film growth of CaAgAs by molecular beam epitaxy
Thin film growth of CaAgAs by molecular beam epitaxy
复制标题
DOI：
10.1088/1361-648x/aba6a7
复制
发表时间：
2020-07
期刊：
影响因子：
--
通讯作者：
T. Hatano;I. Nakamura;S. Ohta;Y. Tomizawa;T. Urata;K. Iida;H. Ikuta
中科院分区：
文献类型：
--
作者：
T. Hatano;I. Nakamura;S. Ohta;Y. Tomizawa;T. Urata;K. Iida;H. Ikuta
我们用分子束外延的方法生长了CaAgAs薄膜，理论上提出了它是一种拓扑绝缘体。电阻率和载流子浓度在4 K时的温度依赖性与体样的报告结果相似。然而，在低磁场下，磁电阻表现出急剧增加，而在散装样品中没有观察到这种行为。这种电阻率的急剧增加可归因于弱反局域效应，并为CaAgAs拓扑表面态的性质提供了线索。
We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.