A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes
A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes
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DOI：
10.1109/led.2003.816590
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发表时间：
2003
影响因子：
4.9
通讯作者：
J. Goh;Jin Jang;K. Cho;Choong-Ki Kim
中科院分区：
文献类型：
--
作者：
J. Goh;Jin Jang;K. Cho;Choong-Ki Kim
提出了一种基于氢化非晶硅(a-Si：H)薄膜晶体管(TFT)的新型像素电路，该电路由三个开关和一个驱动TFT组成，用于有源有机发光二极管(AMOLED)。基于栅偏压下a-Si：H TFT阈值电压漂移的电路模拟结果表明，该电路可以补偿10000 h以上的阈值电压漂移。
We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10000 h of operation.