Suppression of secondary electrons from an endplate of a tandem mirror by use of a biased mesh
Suppression of secondary electrons from an endplate of a tandem mirror by use of a biased mesh
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使用偏置网格抑制来自串联镜端板的二次电子
DOI：
10.1063/1.871439
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发表时间：
1995
影响因子：
2.2
通讯作者：
T. Tamano
中科院分区：
文献类型：
--
作者：
T. Saito;Y. Kiwamoto;Y. Tatematsu;Y. Yoshimura;T. Takahashi;M. Inutake;T. Tamano
将负偏压施加到放置在伽马10串联反射镜的终板前面的网格上[物理评论快报]。55，939（1985）]。大约10 V的偏置电压导致端部区域中的电势差增加kV的数量级。增量大约是端损电子温度的两倍，其中大部分源于端板前面的鞘层电位降。假设从终板发射的几乎所有二次电子都被反射，这些结果与开放磁场位形的势模型的预测一致[J. Phys Soc. Jpn. 61，3153（1992）]。
Negative bias is applied to a mesh placed in front of an endplate of the GAMMA 10 tandem mirror [Phys. Rev. Lett. 55, 939 (1985)]. A bias voltage of around 10 V results in an increase of the potential difference by an order of kV in the end region. The increment is about two times the temperature of end‐loss electrons and most of that stems from the sheath potential drop in front of the endplate. Provided that almost all the secondary electrons emitted from endplate are reflected, these results agree with the prediction of a potential model for the open magnetic field configuration [J. Phys Soc. Jpn. 61, 3153 (1992)].