Influence of Annealing Conditions on the Optical and Structural Properties of Spin-coated as 2 S 3 Chalcogenide Glass Thin Films References and Links
Influence of Annealing Conditions on the Optical and Structural Properties of Spin-coated as 2 S 3 Chalcogenide Glass Thin Films References and Links
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退火条件对旋涂2 S 3 硫系玻璃薄膜光学和结构性能的影响参考文献和链接
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M. Samoć
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Shanshan Song;J. Dua;C. B. Arnold;Y. T. Kanamori;S. Terunuma;T. Takahashi;Miyashita;J M Harbold;F. Ilday;F. Wise;J. Sanghera;V. Q. Nguyen;L. Shaw;I. Aggarwal;Highly;A Zoubir;M. Richardson;C. Rivero;A. Schulte;C. Lopez;K. Richardson;N. Hô;R. Vallée;Direct;T K Sudoh;Y. Nakano;K. Tada;S. Howard;Z. Liu;A. O. Dirisu;C. Gmachl;C. B. Arnold;Lee;C. Grillet;C. Smith;D. Moss;B. Eggleton;D. Freeman;B. Luther;S. Madden;A. Rode;Y. Ruan;Y. Lee;K E Youden;T. Grevatt;R. Eason;H. Rutt;R. S. Deol;G. Wylangowski;V Balan;C. Vigreux;A. Pradel;S. Song;N. Carlie;J. Boudies;L. Petit;C Tsay;E. Mujagić;C. Madsen;B Singh;G. C. Chern;I. Luaks;J M Gonzá;M. Stuchlik;M. Vlcek;R. Jiménez;E. Márquez;J J Santiago;M. Sano;M. Hamman;N. Chen;E Marquez;J. Ramírez;P. Villarest;R. Jiménez;P. Ewen;A. E. Owen;A Zakery;M. Samoć
硫系玻璃的旋转镀膜是一种低成本，可扩展的方法来创建光学级薄膜，这是理想的可见光和红外应用。本文通过紫外-可见和红外光谱分析，研究了退火对as2o3薄膜光学参数的影响，并将结果与溶剂去除相关的物理性质变化联系起来。过量溶剂的蒸发导致更高度协调，更密集的玻璃网络具有更高的指数和更低的吸收。根据退火温度和时间的不同，可以获得从n = 2.1到体积值（n = 2.4）的指标值，从而实现材料优化。基于光致折射率变化的多波长分布反馈激光阵列波长微调技术，《电子》。利用硫系玻璃包层的光学处理进行量子级联激光器的模式调谐。硫族化物光子晶体波导的光敏后调谐，“光学。GaLa -S硫族化物玻璃薄膜光学波导的脉冲激光沉积”，中国科学院学报。chalgenide薄膜的射频溅射沉积，“集成chalgenide波导与量子级联激光器的片上中红外光子电路，”提交（2010）。自旋涂覆As2S3薄膜在高分辨率三层抗蚀剂系统中的应用，“苹果”。沉积技术对非晶态砷薄膜结构和光学性能的影响，"应用学报。自旋镀膜As2S3多层薄膜的生长和光学特性，“基于非晶硫化砷薄膜透射光谱的厚度和光学常数计算”，J.超快激光沉积As2S3硫化砷薄膜的低损耗波导，“J。
Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As 2 S 3 films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization. nonlinear AsS -Se glasses for all-optical switching, " Opt. Wavelength trimming technology for multiple-wavelength distributed-feedback laser arrays by photo-induced refractive index change, " Electron. Mode tuning of quantum cascade lasers through optical processing of chalcogenide glass claddings, " Appl. Photosensitive post tuning of chalcogenide photonic crystal waveguides, " Opt. Pulsed-laser deposition of GaLa -S chalcogenide glass thin-film optical wave-guides, " Appl. Chalcogenide thin films deposited by radio-frequency sputtering, " J. Integrated chalcogenide waveguides with quantum cascade lasers for on-chip mid-infrared photonic circuits, " submitted (2010). Application of spin-coated As2S3 thin films in a high resolution trilayer resist system, " Appl. Influence of the deposition technique on the structural and optical properties of amorphous AsS films, " Appl. Growth and optical characterization of spin-coated As2S3 multilayer thin films, " Calculation of the thickness and optical constants of amorphous arsenic sulfide films from their transmission spectra, " J. Low-loss waveguides in ultrafast laser-deposited As2S3 chalcogenide films, " J.