Atom chips:: Fabrication and thermal properties
Atom chips:: Fabrication and thermal properties
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DOI：
10.1063/1.1804601
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发表时间：
2004-10-04
影响因子：
4
通讯作者：
Bar-Joseph, I
中科院分区：
文献类型：
--
作者：
Groth, S;Krüger, P;Bar-Joseph, I
中性原子可以被表面安装的微观载流和带电结构捕获和操纵。我们提出了一种基于蒸发金属薄膜的原子芯片的光刻制造工艺。该工艺的尺寸极限低于1 μ m。在室温下，细导线可以携带超过10（7）A/cm（2）的电流密度和超过500 V的电压。不同的基板和金属厚度（高达5 μ m）的广泛的测试测量进行比较，模型的微观导线的加热特性。在所测试的材料中，我们发现Si是最适合用于原子芯片的衬底。(C)2004年，美国物理学会。
Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 mum. At room temperature, thin wires can carry current densities of more than 10(7) A/cm(2) and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 mum) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips. (C) 2004 American Institute of Physics.