Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions
Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions
复制标题
DOI：
10.1016/j.jcrysgro.2013.11.031
复制
发表时间：
2014-09
影响因子：
1.8
通讯作者：
T. Mitani;N. Komatsu;Tetsuo Takahashi;Tomohisa Kato;Fujii Kuniharu;T. Ujihara;Y. Matsumoto;K. Kurashige;H. Okumura
中科院分区：
文献类型：
--
作者：
T. Mitani;N. Komatsu;Tetsuo Takahashi;Tomohisa Kato;Fujii Kuniharu;T. Ujihara;Y. Matsumoto;K. Kurashige;H. Okumura
