100-200 GHz CMOS Signal Sources and Detectors
100-200 GHz CMOS Signal Sources and Detectors
复制标题
100-200 GHz CMOS 信号源和探测器
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Sankaran
中科院分区：
文献类型：
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作者：
K. O;C. Cao;E. Seok;S. Sankaran
The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.
