p-Type InN nanowires.
p-Type InN nanowires.
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DOI：
10.1021/nl4030819
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发表时间：
2013-10
期刊：
影响因子：
10.8
通讯作者：
S. Zhao;B. H. Le;D. P. Liu;X. Liu;M. G. Kibria;T. Szkopek;H. Guo;Z. Mi
中科院分区：
文献类型：
--
作者：
S. Zhao;B. H. Le;D. P. Liu;X. Liu;M. G. Kibria;T. Szkopek;H. Guo;Z. Mi
在这封信中，我们证明，与纳米线结构的优点和自催化生长过程的p型InN可以实现第一次通过“直接”镁（Mg）掺杂。通过光致发光实验证实了InN中Mg受主能级的存在，并通过研究InN纳米线场效应晶体管的传输特性明确地证明了P型导电的直接证据。此外，近表面的费米能级的InN可以从近本征的p型简并通过控制Mg掺杂剂的掺入，这是在Mg掺杂的InN薄膜的生长表面上通常观察到的电子积累相反。使用VASP电子程序包的第一性原理计算进一步表明，在Mg掺杂的InN纳米线上形成的p型表面在能量上是高度稳定的。
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by "direct" magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.