The effects of lattice strain, dislocations, and microstructure on the transport properties of YSZ films
The effects of lattice strain, dislocations, and microstructure on the transport properties of YSZ films
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晶格应变、位错和微观结构对 YSZ 薄膜输运性能的影响
DOI：
10.1039/c7cp02017a
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发表时间：
2017
影响因子：
3.3
通讯作者：
Harrington G
中科院分区：
文献类型：
--
作者：
Harrington G
在过去的十年里，YSZ薄膜的导电性增强一直受到人们的极大关注。在本文中，我们研究了衬底晶格失配和薄膜厚度对YSZ薄膜的应变和电导率的影响。在MgO、Al_2O_3、LAO和NGO衬底上生长了8mol%YSZ薄膜，从而控制了薄膜/衬底界面的晶格失配。膜的厚度是不同的，以探测的界面的传输性能的贡献，通过阻抗谱和示踪剂扩散测量。没有增强的任何薄膜的传输性能被发现超过单晶值，而不是晶格应变的影响被发现是最小的。由于晶界的非均匀分布，所有薄膜的界面电阻更大，并且没有发现增强传输位错的证据。
Enhanced conductivity in YSZ films has been of substantial interest over the last decade. In this paper we examine the effects of substrate lattice mismatch and film thickness on the strain in YSZ films and the resultant effect on the conductivity. 8 mol% YSZ films have been grown on MgO, Al2O3, LAO and NGO substrates, thereby controlling the lattice mismatch at the film/substrate interface. The thickness of the films was varied to probe the interfacial contribution to the transport properties, as measured by impedance spectroscopy and tracer diffusion. No enhancement in the transport properties of any of the films was found over single crystal values, and instead the effects of lattice strain were found to be minimal. The interfaces of all films were more resistive due to a heterogeneous distribution of grain boundaries, and no evidence for enhanced transport down dislocations was found.