Comprehensive Kinetic and Mechanistic Analysis of TiO2 Photocatalytic Reactions According to the Direct-Indirect Model: (I) Theoretical Approach
Comprehensive Kinetic and Mechanistic Analysis of TiO2 Photocatalytic Reactions According to the Direct-Indirect Model: (I) Theoretical Approach
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DOI:
10.1021/jp4121645
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发表时间:
2014-07-03
影响因子:
3.7
通讯作者:
Salvador, Pedro
中科院分区:
文献类型:
--
作者:
Montoya, Juan Felipe;Peral, Jose;Salvador, Pedro
The photocatalytic oxidation kinetics of organic species in semiconductor (sc) gas phase and liquid semiconductor suspensions, strongly depends on the electronic interaction strength of substrate species with the sc surface. According to the Direct-Indirect (D-I) model, developed as an alternative to the Langmuir-Hinshelwood (L-H) model (Salvador, P. et al. Catalysis Today 2007, 129, 247), when chemisorption of dissolved substrate species is not favored and physisorption is the only existing adsorption mechanism, interfacial hole transfer takes place via an indirect transfer (IT) mechanism, the photooxidation rate exponentially depending on the incident photon flux (V-ox = V-ox(IT) proportional to rho(n)), with n = 1/2 under high enough photon flux (standard experimental conditions), whatever the dissolved substrate concentration, [(RH2)(liq)]. In contrast, under simultaneous physisorption and chemisorption of substrate species, hole capture takes place via a combination of an indirect transfer (IT) and a direct transfer (DT) mechanism (V-ox = V-ox(IT) + V-ox(DT)) with V-ox(DT) proportional to rho(n) and n = 1 for low enough p values, as long as adsorption-desorption equilibrium