Annealing effects on hydrogenated diamond NOR logic circuits
Annealing effects on hydrogenated diamond NOR logic circuits
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DOI：
10.1063/1.5022590
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发表时间：
2018-04
影响因子：
4
通讯作者：
Jiangwei Liu;H. Oosato;M. Liao;M. Imura;E. Watanabe;Y. Koide
中科院分区：
文献类型：
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作者：
Jiangwei Liu;H. Oosato;M. Liao;M. Imura;E. Watanabe;Y. Koide
本文制作并表征了由两个p型增强模式（e模式）金属氧化物半导体场效应晶体管（mosfet）和一个负载电阻组成的氢化金刚石（H-diamond） NOR逻辑电路。论证了NOR逻辑电路的制备工艺和退火对电路电性能的影响。接收和300°C退火的NOR逻辑电路具有明显的逻辑特性。当e型mosfet的一个或两个输入电压为- 10.0 V和“高”信号时，输出电压响应0 V和“低”信号。相反，当输入电压均为0 V和“低”信号时，输出电压响应- 10.0 V和“高”信号。在400°C退火后，NOR逻辑特性被破坏，这可能是由于h -金刚石mosfet的退化。
Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are −10.0 V and “high” signals, output voltages respond 0 V and “low” signals. Instead, when both input voltages are 0 V and “low” signals, output voltage responds −10.0 V and a “high” signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.